Auger recombination effect on threshold current of InGaAsP quantum well lasers

Journal Article · Wed Jun 01 00:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071956· OSTI ID:5595037

Sugimura, A

The Auger recombination effect on the threshold current of the InGaAsP quantum well (QW) laser is studied theoretically. All possible transitions between the quantized subbands of two-dimensional carriers are taken into account in evaluating the radiative process with the k-selection rule and the Auger process. The calculated threshold current agrees well with the reported experimental results for 1.07 ..mu..m InGaAsP QW lasers. The Auger component of the threshold current and its temperature dependence strongly depend on the QW structure, resulting in the necessity for an elaborate QW structure design, although both cannot be optimized at the same time. A design procedure is elucidated for a structure which gives the lowest threshold current density for the 1.07, 1.3, and 1.55 ..mu..m InGaAsP QW lasers.

• Research Organization: Musashino Elec. Communication Lab., Nippon Telegraph and Telephone Public Corp., Tokyo
• OSTI ID: 5595037
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-19:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
CURRENTS
AUGER EFFECT
CARRIERS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
RECOMBINATION
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)