Amorphous semiconductor and amorphous silicon photovoltaic device

Patent · Tue Feb 12 00:00:00 EST 1985

OSTI ID:5583966

Hamakawa, Y; Tawada, Y

An amorphous silicon semiconductor of the general formula: a-Si(/sub 1/- /sub x/ - /sub y/ )C /sub x/ N /sub y/ containing hydrogen and/or fluorine is disclosed, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO/sub 2/ as a transparent electrode for the photovoltaic device, with the SnO/sub 2/ layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.

• Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha (Japan)
• Patent Number(s): US 4499331
• OSTI ID: 5583966
• Resource Relation: Patent Priority Date: Priority date 17 Nov 1983, Japan; Other Information: PAT-APPL-552951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
P-N JUNCTIONS
AMORPHOUS STATE
EFFICIENCY
ELECTRICAL PROPERTIES
ELECTRODES
FABRICATION
HETEROJUNCTIONS
N-TYPE CONDUCTORS
OPACITY
P-TYPE CONDUCTORS
PHOTOVOLTAIC CONVERSION
SILICON COMPOUNDS
SILICON OXIDES
THIN FILMS
CHALCOGENIDES
CONVERSION
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
ENERGY CONVERSION
EQUIPMENT
FILMS
JUNCTIONS
MATERIALS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion