skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: A fast laser alloying process for the selective electroplating of metal on SiO sub 2 and polyimide

Conference ·
OSTI ID:5580105

A new laser direct-write process for patterning of metal on multichip modules has been developed. The process involves the laser modification of the non-conductive surface of a seed multilayer, converting it to a conductive surface, which can be electroplated with metal. The seed multilayer is composed of a TiW adhesion layer, onto which a Au film is sputtered, followed by an a-Si layer, which forms the non-conductive surface. The laser modifies the surface by alloying (or mixing) the Si and Au to form the conductive surface. This laser process has been shown to be capable of writing speeds of 2.5 m/s. With a silicon dioxide interlevel dielectric layer, the process works over a large range of laser power (P{sub max}/P{sub min} {approximately} 5). A polyimide interlevel dielectric layer can be used without damage or loss of adhesion, although the process margin is substantially reduced (P{sub max}/P{sub min} {approximately} 2).

Research Organization:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5580105
Report Number(s):
UCRL-JC-109268; CONF-911202-76; ON: DE92011764
Resource Relation:
Conference: Annual fall meeting of the Materials Research Society, Boston, MA (United States), 2-6 Dec 1991
Country of Publication:
United States
Language:
English