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Title: Laser processing of polycrystalline silicon solar cells

Abstract

In the formation of p-n junctions in polycrystalline solar cells, any conventional high-temperature treatment will cause adverse effects either because of dopant diffusion along the grain boundaries which may cause shorting of the junction, or because of contamination by undesired impurities. Recently, we have demonstrated that ion implantation and pulsed-laser annealing can be used to produce well-controlled dopant regions in polycrystalline Si. Because of the short duration of the laser radiation and because the near-surface region of the samples melt, grain boundary diffusion and segregation can be eliminated. Solar cells fabricated from cast polycrystalline Si by this technique have resulted in open circuit voltages as high as 560 mv and efficiencies as high as 11.6%.

Authors:
; ; ;
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (USA)
OSTI Identifier:
5579326
Report Number(s):
CONF-791112-55
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Technical Report
Resource Relation:
Conference: Symposium on the scientific basis for nuclear waste management, Boston, MA, USA, 26 Nov 1979
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; ANNEALING; DIFFUSION; GRAIN BOUNDARIES; ION IMPLANTATION; LASER-RADIATION HEATING; P-N JUNCTIONS; PERFORMANCE; POLYCRYSTALS; QUANTUM EFFICIENCY; SILICON; CRYSTAL STRUCTURE; CRYSTALS; DIRECT ENERGY CONVERTERS; EFFICIENCY; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; HEATING; JUNCTIONS; MICROSTRUCTURE; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PLASMA HEATING; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Young, R T, Wood, R F, Narayan, J, and White, C W. Laser processing of polycrystalline silicon solar cells. United States: N. p., 1979. Web.
Young, R T, Wood, R F, Narayan, J, & White, C W. Laser processing of polycrystalline silicon solar cells. United States.
Young, R T, Wood, R F, Narayan, J, and White, C W. 1979. "Laser processing of polycrystalline silicon solar cells". United States.
@article{osti_5579326,
title = {Laser processing of polycrystalline silicon solar cells},
author = {Young, R T and Wood, R F and Narayan, J and White, C W},
abstractNote = {In the formation of p-n junctions in polycrystalline solar cells, any conventional high-temperature treatment will cause adverse effects either because of dopant diffusion along the grain boundaries which may cause shorting of the junction, or because of contamination by undesired impurities. Recently, we have demonstrated that ion implantation and pulsed-laser annealing can be used to produce well-controlled dopant regions in polycrystalline Si. Because of the short duration of the laser radiation and because the near-surface region of the samples melt, grain boundary diffusion and segregation can be eliminated. Solar cells fabricated from cast polycrystalline Si by this technique have resulted in open circuit voltages as high as 560 mv and efficiencies as high as 11.6%.},
doi = {},
url = {https://www.osti.gov/biblio/5579326}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

Technical Report:
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