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Title: Effects of dry etching on GaAs

Abstract

A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch anisotropy, an important consideration for device and circuit fabrication is whether a sample suffers radiation damage by exposure to ions, electrons, or ultraviolet light during etching. In this study we evaluate the degree of radiation damage induced in GaAs by ion-beam etching with Ar, reactive-ion etching with CF/sub 4/ and CHF/sub 3/, and ion-beam-assisted etching with Ar and Cl/sub 2/. In addition, we propose and demonstrate processing techniques which can be used after dry etching to reduce the effects of radiation damage. GaAs samples were etched under a variety of etching conditions. The degree of radiation damage caused by etching was determined by evaluating Schottky diodes fabricated on the etched surfaces and by using deep level transient spectroscopy to characterize trapping centers. It was found that the barrier heights and breakdown voltages of Schottky diodes were changed after etching. Also, an increase in the density of traps was observed. Variations in the etching conditions had a strong effect on the measured characteristics of the samples.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
OSTI Identifier:
5577103
Resource Type:
Journal Article
Journal Name:
J. Vac. Sci. Technol., B; (United States)
Additional Journal Information:
Journal Volume: 1:4
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; ARGON IONS; COLLISIONS; GALLIUM ARSENIDES; ETCHING; ION COLLISIONS; PHYSICAL RADIATION EFFECTS; CARBON FLUORIDES; CARBON TETRAFLUORIDE; DAMAGE; INTEGRATED CIRCUITS; MICROELECTRONICS; SCHOTTKY BARRIER DIODES; ARSENIC COMPOUNDS; ARSENIDES; CARBON COMPOUNDS; CHARGED PARTICLES; ELECTRONIC CIRCUITS; FLUORIDES; FLUORINATED ALIPHATIC HYDROCARBONS; FLUORINE COMPOUNDS; GALLIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HALOGENATED ALIPHATIC HYDROCARBONS; IONS; MICROELECTRONIC CIRCUITS; ORGANIC COMPOUNDS; ORGANIC FLUORINE COMPOUNDS; ORGANIC HALOGEN COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE FINISHING; 640301* - Atomic, Molecular & Chemical Physics- Beams & their Reactions; 360605 - Materials- Radiation Effects

Citation Formats

Pang, S.W., Lincoln, G.A., McClelland, R.W., DeGraff, P.D., Geis, M.W., and Piacentini, W.J. Effects of dry etching on GaAs. United States: N. p., 1983. Web. doi:10.1116/1.582741.
Pang, S.W., Lincoln, G.A., McClelland, R.W., DeGraff, P.D., Geis, M.W., & Piacentini, W.J. Effects of dry etching on GaAs. United States. doi:10.1116/1.582741.
Pang, S.W., Lincoln, G.A., McClelland, R.W., DeGraff, P.D., Geis, M.W., and Piacentini, W.J. Sat . "Effects of dry etching on GaAs". United States. doi:10.1116/1.582741.
@article{osti_5577103,
title = {Effects of dry etching on GaAs},
author = {Pang, S.W. and Lincoln, G.A. and McClelland, R.W. and DeGraff, P.D. and Geis, M.W. and Piacentini, W.J.},
abstractNote = {A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch anisotropy, an important consideration for device and circuit fabrication is whether a sample suffers radiation damage by exposure to ions, electrons, or ultraviolet light during etching. In this study we evaluate the degree of radiation damage induced in GaAs by ion-beam etching with Ar, reactive-ion etching with CF/sub 4/ and CHF/sub 3/, and ion-beam-assisted etching with Ar and Cl/sub 2/. In addition, we propose and demonstrate processing techniques which can be used after dry etching to reduce the effects of radiation damage. GaAs samples were etched under a variety of etching conditions. The degree of radiation damage caused by etching was determined by evaluating Schottky diodes fabricated on the etched surfaces and by using deep level transient spectroscopy to characterize trapping centers. It was found that the barrier heights and breakdown voltages of Schottky diodes were changed after etching. Also, an increase in the density of traps was observed. Variations in the etching conditions had a strong effect on the measured characteristics of the samples.},
doi = {10.1116/1.582741},
journal = {J. Vac. Sci. Technol., B; (United States)},
number = ,
volume = 1:4,
place = {United States},
year = {1983},
month = {10}
}