Structure determination of the Si(111):B( radical 3 times radical 3) R 30 degree surface: Subsurface substitutional doping

Journal Article · Mon Sep 18 00:00:00 EDT 1989 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.63.1253· OSTI ID:5574353

Headrick, R L; Robinson, I K; Vlieg, E; Feldman, L C ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

Synchrotron x-ray diffraction has been used to analyze the ({radical}3{times}{radical}3){ital R}30{degree} reconstruction of B/Si(111). Excellent agreement is obtained with in-plane data for a model in which boron sits in every third site of threefold symmetry. Out-of-plane diffraction, however, is only consistent with boron {ital below} the surface in the fivefold-coordinated substitutional site under a silicon {ital T}{sub 4} adatom. The structure is confirmed by the growth behavior under room-temperature Si deposition in which the silicon adatom is displaced from its ordered site leaving boron in a two-dimensional ordered substitutional array.

• OSTI ID: 5574353
• Journal Information: Physical Review Letters; (USA), Vol. 63:12; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
X-RAY DIFFRACTION
SILICON
ADSORPTION
AMORPHOUS STATE
ANNEALING
BORON IONS
CRYSTAL STRUCTURE
INTERFACES
ION IMPLANTATION
KEV RANGE 10-100
MEDIUM TEMPERATURE
STRUCTURE FACTORS
SYNCHROTRON RADIATION
BREMSSTRAHLUNG
CHARGED PARTICLES
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
IONS
KEV RANGE
RADIATIONS
SCATTERING
SEMIMETALS
SORPTION
360602* - Other Materials- Structure & Phase Studies