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Title: Investigation of crucible materials in gradient freeze gallium arsenide crystal growth

Abstract

Undoped synthesized GaAs and crystals grown by the gradient freeze method were analyzed by room temperature Hall effect for net carrier density, secondary ion mass spectroscopy for Si and residual impurity concentrations, localized vibrational mode spectroscopy for C concentration, and optical absorption for neutral EL2 concentration. Impurity compensation was examined to determine limits for Si content in semi-insulating GaAs. Boules synthesized in various materials are used to determine the residual impurity densities contributing to compensation. Shallow donor densities below the residual acceptor concentration resulted in semi-insulating electronic properties for two synthesis boules. The Si incorporation rate in gradient freeze crystals is quantified through the deviation of net donor concentration from the normal freeze distribution. Crystals grown As-rich, Ga-rich and near-stoichiometric composition in SiO/sub 2/ crucibles show order-of-magnitude differences of Si incorporation rate. Crystals grown in Al/sub 2/O/sub 3/ and graphite crucibles have <10/sup -2/ and >3 times the incorporation rates of gradient freeze GaAs grown in SiO/sub 2/ crucibles. Crystals grown in a vertical gradient freeze configuration have <1/7 the incorporation rate of those grown horizontally. A vapor mechanism for incorporation of Si is indicated that contributes enough Si to preclude semi-insulating properties. At high values of net donor density,more » an acceptor density is seen that may be of native defect origin and is positively correlated with net donor density. 63 refs., 16 figs., 6 tabs.« less

Authors:
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (USA)
OSTI Identifier:
5573510
Report Number(s):
LBL-24650
ON: DE88006333
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Technical Report
Resource Relation:
Other Information: Thesis (M.S.). Portions of this document are illegible in microfiche products. Thesis
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL GROWTH; ALUMINIUM OXIDES; CARRIER DENSITY; CRUCIBLES; GRAPHITE; HALL EFFECT; IMPURITIES; LINERS; SILICA; SILICON; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CARBON; CHALCOGENIDES; ELEMENTAL MINERALS; ELEMENTS; GALLIUM COMPOUNDS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SILICON OXIDES; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Hurd, J L. Investigation of crucible materials in gradient freeze gallium arsenide crystal growth. United States: N. p., 1987. Web.
Hurd, J L. Investigation of crucible materials in gradient freeze gallium arsenide crystal growth. United States.
Hurd, J L. Tue . "Investigation of crucible materials in gradient freeze gallium arsenide crystal growth". United States.
@article{osti_5573510,
title = {Investigation of crucible materials in gradient freeze gallium arsenide crystal growth},
author = {Hurd, J L},
abstractNote = {Undoped synthesized GaAs and crystals grown by the gradient freeze method were analyzed by room temperature Hall effect for net carrier density, secondary ion mass spectroscopy for Si and residual impurity concentrations, localized vibrational mode spectroscopy for C concentration, and optical absorption for neutral EL2 concentration. Impurity compensation was examined to determine limits for Si content in semi-insulating GaAs. Boules synthesized in various materials are used to determine the residual impurity densities contributing to compensation. Shallow donor densities below the residual acceptor concentration resulted in semi-insulating electronic properties for two synthesis boules. The Si incorporation rate in gradient freeze crystals is quantified through the deviation of net donor concentration from the normal freeze distribution. Crystals grown As-rich, Ga-rich and near-stoichiometric composition in SiO/sub 2/ crucibles show order-of-magnitude differences of Si incorporation rate. Crystals grown in Al/sub 2/O/sub 3/ and graphite crucibles have <10/sup -2/ and >3 times the incorporation rates of gradient freeze GaAs grown in SiO/sub 2/ crucibles. Crystals grown in a vertical gradient freeze configuration have <1/7 the incorporation rate of those grown horizontally. A vapor mechanism for incorporation of Si is indicated that contributes enough Si to preclude semi-insulating properties. At high values of net donor density, an acceptor density is seen that may be of native defect origin and is positively correlated with net donor density. 63 refs., 16 figs., 6 tabs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {12}
}

Technical Report:
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