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Title: Vapor pressure of phosphorus and arsenic over indium-rich melts of the gallium-indium-phosphorus-arsenic system

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:5573294

The partial pressures of the various molecular forms of phosphorus and arsenic over indium-rich melts of the Ga-In-P-As system were determined by the flow method from the change in the mass of the load, determined by means of the radionuclide /sup 32/P. The possibility of change in the composition of the crystallizing solid solution through the evaporation of phosphorus and arsenic from the liquid phase was investigated.

Research Organization:
Moscow Institute of Electronics, USSR
OSTI ID:
5573294
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 22:8; Other Information: Translated from Izv. Akad. Nauk. SSSR, Neorg. Mater.; 22: No. 8, 1251-1254(Aug 1986)
Country of Publication:
United States
Language:
English