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Title: Formation and growth of an amorphous phase by solid-state reaction between GaAs and Co thin films

Abstract

Solid-state amorphization reaction (SSAR) between GaAs and Co thin films was investigated by transmission electron microscopy and Auger electron spectroscopy. Upon annealing of GaAs/Co thin-film couples at 260--300 {degree}C, an amorphous phase was observed to form. Annealing at higher temperatures or for longer times led to the crystallization of the amorphous phase into a supersaturated CoAs solid solution phase with the B31 structure. Amorphization is attributed to the rapid diffusion of Co in the rather open GaAs structure. In order to consider the thermodynamic driving force for amorphization and subsequent crystallization, the phase diagram of CoGa--CoAs was investigated using DTA and metallography. The pseudobinary system was modeled thermodynamically to yield relative stability data for the various phases between GaAs and Co. These data were used to rationalize the amorphization process.

Authors:
; ; ;  [1]
  1. (Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706 (USA))
Publication Date:
OSTI Identifier:
5562823
DOE Contract Number:  
FG02-86ER45274
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research; (USA)
Additional Journal Information:
Journal Volume: 6:7; Journal ID: ISSN 0884-2914
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT; AMORPHOUS STATE; ORDER-DISORDER TRANSFORMATIONS; GALLIUM ARSENIDES; ANNEALING; AUGER ELECTRON SPECTROSCOPY; BINARY ALLOY SYSTEMS; RECRYSTALLIZATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ALLOY SYSTEMS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; METALS; MICROSCOPY; PHASE TRANSFORMATIONS; PNICTIDES; SPECTROSCOPY; TRANSITION ELEMENTS; 360202* - Ceramics, Cermets, & Refractories- Structure & Phase Studies; 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Shiau, F., Chen, S., Loomans, M., and Chang, Y.A. Formation and growth of an amorphous phase by solid-state reaction between GaAs and Co thin films. United States: N. p., 1991. Web. doi:10.1557/JMR.1991.1532.
Shiau, F., Chen, S., Loomans, M., & Chang, Y.A. Formation and growth of an amorphous phase by solid-state reaction between GaAs and Co thin films. United States. doi:10.1557/JMR.1991.1532.
Shiau, F., Chen, S., Loomans, M., and Chang, Y.A. Mon . "Formation and growth of an amorphous phase by solid-state reaction between GaAs and Co thin films". United States. doi:10.1557/JMR.1991.1532.
@article{osti_5562823,
title = {Formation and growth of an amorphous phase by solid-state reaction between GaAs and Co thin films},
author = {Shiau, F. and Chen, S. and Loomans, M. and Chang, Y.A.},
abstractNote = {Solid-state amorphization reaction (SSAR) between GaAs and Co thin films was investigated by transmission electron microscopy and Auger electron spectroscopy. Upon annealing of GaAs/Co thin-film couples at 260--300 {degree}C, an amorphous phase was observed to form. Annealing at higher temperatures or for longer times led to the crystallization of the amorphous phase into a supersaturated CoAs solid solution phase with the B31 structure. Amorphization is attributed to the rapid diffusion of Co in the rather open GaAs structure. In order to consider the thermodynamic driving force for amorphization and subsequent crystallization, the phase diagram of CoGa--CoAs was investigated using DTA and metallography. The pseudobinary system was modeled thermodynamically to yield relative stability data for the various phases between GaAs and Co. These data were used to rationalize the amorphization process.},
doi = {10.1557/JMR.1991.1532},
journal = {Journal of Materials Research; (USA)},
issn = {0884-2914},
number = ,
volume = 6:7,
place = {United States},
year = {1991},
month = {7}
}