skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of oxygen pressure on the synthesis of YBa sub 2 Cu sub 3 O sub 7 minus x thin films by post-deposition annealing

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.348868· OSTI ID:5561271
; ; ;  [1]
  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6057 (USA)

The effect of ambient oxygen pressure on the synthesis of epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} films on (100) SrTiO{sub 3} substrates by post-deposition annealing of amorphous precursor films was studied for oxygen partial pressures {ital p}{sub O{sub 2}} between 1.0 and 8.0{times}10{sup {minus}5} atm and annealing temperatures between 890 and 650 {degree}C. A {ital p}{sub O{sub 2}}{minus}1/{ital T} diagram containing recent literature data regarding YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} oxygen stoichiometry, phase stability, and liquid-phase formation was compiled to provide guidance for the selection and interpretation of annealing conditions. The results evidence a strong dependency of growth properties on the oxygen pressure with enhanced {ital c}-oriented epitaxy at lower {ital p}{sub O{sub 2}} values. A particularly interesting result is the formation of predominantly {ital c}-oriented films at 740 {degree}C and {ital p}{sub O{sub 2}}=2.6{times}10{sup {minus}4} atm (0.2 Torr). Similar to YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} films produced by {ital in} {ital situ} laser ablation at the same temperature and oxygen pressure, the films exhibited low ion channeling yields ({chi}{sub min}{lt}0.1) and a dense (smooth) surface morphology, while critical currents at 77 K were well in excess of 1 MA/cm{sup 2}. From the observed systematic variation of structural film properties with synthesis conditions, annealing lines were derived indicating ({ital T}-{ital p}{sub O{sub 2}}) combinations for either {ital c}- or {ital a}-oriented epitaxial growth. A comparison is made between these lines and synthesis conditions for {ital in} {ital situ} film growth as compiled recently by Hammond and Bormann (Physica C {bold 162}--{bold 169}, 703 (1989)).

DOE Contract Number:
AC05-84OR21400
OSTI ID:
5561271
Journal Information:
Journal of Applied Physics; (USA), Vol. 69:9; ISSN 0021-8979
Country of Publication:
United States
Language:
English