Observation of strain-enhanced electron-spin polarization in photoemission from InGaAs

Journal Article · Mon May 06 00:00:00 EDT 1991 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.66.2376· OSTI ID:5558067

Maruyama, T; Garwin, E L ^[1]; Prepost, R; Zapalac, G H ^[2]; Smith, J S; Walker, J D ^[3]

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1. Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (USA)
2. Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (USA)
3. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (USA) The Electronics Research Laboratory, University of California, Berkeley, California 94720 (USA)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-{mu}m-thick epitaxial layer of In{sub {ital x}}Ga{sub 1{minus}{ital x}}As with {ital x}{approx}0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

• DOE Contract Number: AC03-76SF00515; AC02-76ER00881
• OSTI ID: 5558067
• Journal Information: Physical Review Letters; (USA), Vol. 66:18; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRON SOURCES
INDIUM ARSENIDES
ENERGY DEPENDENCE
EPITAXY
EV RANGE 01-10
EXPERIMENTAL DATA
HETEROJUNCTIONS
PHOTOEMISSION
QUANTUM EFFICIENCY
SPIN ORIENTATION
STRAINS
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
EMISSION
ENERGY RANGE
EV RANGE
FILMS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
NUMERICAL DATA
ORIENTATION
PARTICLE SOURCES
PNICTIDES
RADIATION SOURCES
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
360603* - Materials- Properties