Phase-front measurements of an injection-locked AlGaAs laser-diode array
- NASA-Goddard Space Flight Center, Instrument Electro-Optics Branch, Code 723, Greenbelt, Maryland 20771 (US)
The phase-front quality of the primary spatial lobe emitted from an injection-locked gain-guided AlGaAs laser-diode array is measured by using an equal-path, phase-shifting Mach--Zehnder interferometer. Root-mean-square phase errors of 0.037{congruent}0.003 wave ({Sigma}/27) are measured for the single spatial lobe, which contained 240-mW cw output power in a single longitudinal mode. This phase-front quality corresponds to a Strehl ratio of {ital S}=0.947, which results in a 0.23-dB power loss from the single lobe's ideal diffraction-limited power. These values are comparable with those measured for single-stripe index-guided AlGaAs lasers.
- OSTI ID:
- 5552218
- Journal Information:
- Optics Letters; (USA), Vol. 14:17; ISSN 0146-9592
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
LASER RADIATION
BEAM PROFILES
SEMICONDUCTOR LASERS
LUMINOSITY
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
NOISE
PHASE SHIFT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)
LASER RADIATION
BEAM PROFILES
SEMICONDUCTOR LASERS
LUMINOSITY
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
NOISE
PHASE SHIFT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)