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Title: Laboratory simulation of cosmic-ray-induced upset in microelectronics

Conference · · Transactions of the American Nuclear Society; (USA)
OSTI ID:5549270

The continuing evolution of integrated microelectronic circuits toward higher density has resulted in smaller feature sizes and fewer electronic charges representing an information bit. These highly integrated circuits are now subject to the phenomenon of single event upset (SEU) caused by ionization from individual particles in the natural radiation environment. A quantity of charge comparable to that representing a data bit can be generated by a single ionizing particle and collected on a circuit node, resulting in a change in the binary state of a memory latch and a logic error for the memory chip. In most cases, the logic error is permanent only in the sense that the information has been destroyed; the physical device is undamaged and may be reprogrammed without further consequence. In some technologies, permanent damage to the device can be induced by a single particle. Because spacecraft system designers require information about the expected in-orbit SEU rate for potential microelectronic devices in order to accomplish successful system design, there is a continuing need for laboratory simulation of SEU. The SEU testing consists of irradiating a device with a prescribed heavy ion or proton beam of known energy and flux, such that the number of upsets can be detected as a function of beam fluence and particle linear energy transfer.

OSTI ID:
5549270
Report Number(s):
CONF-880601-; CODEN: TANSA; TRN: 89-027820
Journal Information:
Transactions of the American Nuclear Society; (USA), Vol. 56; Conference: American Nuclear Society annual meeting, San Diego, CA (USA), 12-16 Jun 1988; ISSN 0003-018X
Country of Publication:
United States
Language:
English