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Title: Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 02, September 11, 1979-November 30, 1979

Abstract

Electrochemical measurements were made on SiHCl/sub 3/ and (CH/sub 3/)/sub 3/SiCl to determine if they were suitable precursors for electrodepositing silicon from organic solvents. The precursors were dissolved in solutions of propylene carbonate containing 0.1M tetrabutylammonium tetrafluoroborate (TBATFB). Cyclic voltammograms of the systems were run at 25/sup 0/C and 70/sup 0/C using Pt as the reference electrode and Pt, Al, or Mo wires as the working electrode. The results showed that the two peaks appearing between 0 and -1.0V could be attributed to impurities made electroactive by addition of the silicon precursor. Reduction to silicon occurred with SiHCl/sub 3/ between -1.0 to -2.8V; however, for (CH/sub 3/)/sub 3/SiCl, no reduction leading to silicon deposition was observed in this region. Several deposits of silicon were done potentiostatically on Mo, Al, and Ni discs. The thickness, surface finish and color of the amorphous deposits were dependent on the precursor concentration, temperature and material, and surface finish of the metal working electrode. The best deposit was done at elevated temperatures (70/sup 0/C) on polished Mo. Attempts to deposit silicon from high temperature molten salts were plagued by corrosion problems and shorting of the electrodes inside the crucible. These problems are being corrected bymore » replacing the original cell with a heavier walled material to use while designing a larger and more versatile apparatus.« less

Authors:
; ; ;
Publication Date:
Research Org.:
EIC Corp., Newton, MA (USA)
OSTI Identifier:
5547116
Report Number(s):
DOE/ET/23046-2
DOE Contract Number:  
AC03-79ET23046
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; ELECTRODEPOSITION; AMORPHOUS STATE; CHLORINE COMPOUNDS; CORROSION; ELECTRODES; FEASIBILITY STUDIES; FILMS; HYDROCARBONS; MOLTEN SALTS; ORGANIC SOLVENTS; POLYCRYSTALS; PRECURSOR; SILICON COMPOUNDS; SILICON SOLAR CELLS; VOLTAMETRY; CHEMICAL REACTIONS; CRYSTALS; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTROLYSIS; ELEMENTS; EQUIPMENT; HALOGEN COMPOUNDS; LYSIS; ORGANIC COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SALTS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; SOLVENTS; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Rauh, R D, Rose, T L, Hoover, T G, and Natwig, D L. Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 02, September 11, 1979-November 30, 1979. United States: N. p., 1980. Web.
Rauh, R D, Rose, T L, Hoover, T G, & Natwig, D L. Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 02, September 11, 1979-November 30, 1979. United States.
Rauh, R D, Rose, T L, Hoover, T G, and Natwig, D L. Fri . "Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 02, September 11, 1979-November 30, 1979". United States.
@article{osti_5547116,
title = {Electrodeposition of polycrystalline and amorphous silicon for photovoltaic applications. Quarterly technical progress report No. 02, September 11, 1979-November 30, 1979},
author = {Rauh, R D and Rose, T L and Hoover, T G and Natwig, D L},
abstractNote = {Electrochemical measurements were made on SiHCl/sub 3/ and (CH/sub 3/)/sub 3/SiCl to determine if they were suitable precursors for electrodepositing silicon from organic solvents. The precursors were dissolved in solutions of propylene carbonate containing 0.1M tetrabutylammonium tetrafluoroborate (TBATFB). Cyclic voltammograms of the systems were run at 25/sup 0/C and 70/sup 0/C using Pt as the reference electrode and Pt, Al, or Mo wires as the working electrode. The results showed that the two peaks appearing between 0 and -1.0V could be attributed to impurities made electroactive by addition of the silicon precursor. Reduction to silicon occurred with SiHCl/sub 3/ between -1.0 to -2.8V; however, for (CH/sub 3/)/sub 3/SiCl, no reduction leading to silicon deposition was observed in this region. Several deposits of silicon were done potentiostatically on Mo, Al, and Ni discs. The thickness, surface finish and color of the amorphous deposits were dependent on the precursor concentration, temperature and material, and surface finish of the metal working electrode. The best deposit was done at elevated temperatures (70/sup 0/C) on polished Mo. Attempts to deposit silicon from high temperature molten salts were plagued by corrosion problems and shorting of the electrodes inside the crucible. These problems are being corrected by replacing the original cell with a heavier walled material to use while designing a larger and more versatile apparatus.},
doi = {},
url = {https://www.osti.gov/biblio/5547116}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {2}
}

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