Fermi-Level-Pinning Defects in Highly {ital n}-Doped Silicon
Journal Article
·
· Physical Review Letters
- NEC Research Institute, Princeton, New Jersey 08540-6634 (United States)
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
Based on first-principles calculations and analysis of x-ray absorption measurements, an unconventional mechanism is proposed for the saturation of carriers in highly n -doped Si. The mechanism is Fermi-level pinning from a new class of defect centers containing two separated but interacting dopant atoms with no associated Si vacancies. The number of such centers increases sharply at high doping levels. A simple model provides very good agreement with the maximum carrier concentrations observed in Si. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 554394
- Journal Information:
- Physical Review Letters, Vol. 79, Issue 24; Other Information: PBD: Dec 1997
- Country of Publication:
- United States
- Language:
- English
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