Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs

doi:https://doi.org/10.1063/1.337670

Title: Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs

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Abstract

Distributions of stress, dislocations, and the EL2 midgap defect have been optically mapped in semi-insulating GaAs wafers, from (100)-grown crystals created by the liquid-encapsulated Czochralski method. The evolution of EL2 along the growth axis indicates that assessment of this property through the majority of the crystal volume is often poorly represented by wafers from near the two end regions. A comparison of maps for stress, dislocation and EL2 patterns as all measured with a given wafer does not support hypotheses that EL2 is a direct consequence either of stress or of dislocations. Other mechanisms, such as segregation and melt dynamics, thus appear more likely to control the formation and distribution of EL2.

Authors:: Dobrilla, P; Blakemore, J S

Publication Date:: 1986-07-01

Research Org.:: Oregon Graduate Center, Beaverton, Oregon 97006

OSTI Identifier:: 5540801

DOE Contract Number:: AC04-76DP00789

Resource Type:: Journal Article

Journal Name:: J. Appl. Phys.; (United States)

Additional Journal Information:: Journal Volume: 60:1

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; DISLOCATIONS; RESIDUAL STRESSES; BREAKDOWN; CHARGE DISTRIBUTION; CHARGED-PARTICLE TRANSPORT; CURRENT DENSITY; CZOCHRALSKI METHOD; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELECTRODES; ELECTRONIC STRUCTURE; MAPPING; MIM JUNCTIONS; MYLAR; POLYMERS; SPACE CHARGE; TUNNEL EFFECT; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CURRENTS; ESTERS; GALLIUM COMPOUNDS; JUNCTIONS; LINE DEFECTS; MATERIALS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; PETROCHEMICALS; PETROLEUM PRODUCTS; PHYSICAL PROPERTIES; PLASTICS; PNICTIDES; POLYESTERS; RADIATION TRANSPORT; SEMICONDUCTOR JUNCTIONS; STRESSES; SYNTHETIC MATERIALS; 360603* - Materials- Properties

Citation Formats


                    Dobrilla, P, and Blakemore, J S. Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs.  United States: N. p., 1986. 
        Web.  doi:10.1063/1.337670.

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                    Dobrilla, P, & Blakemore, J S. Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs.  United States.  https://doi.org/10.1063/1.337670

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                    Dobrilla, P, and Blakemore, J S. Tue .  
        "Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs".  United States.  https://doi.org/10.1063/1.337670.

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@article{osti_5540801,

  title        = {Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAs},

  author       = {Dobrilla, P and Blakemore, J S},

  abstractNote = {Distributions of stress, dislocations, and the EL2 midgap defect have been optically mapped in semi-insulating GaAs wafers, from (100)-grown crystals created by the liquid-encapsulated Czochralski method. The evolution of EL2 along the growth axis indicates that assessment of this property through the majority of the crystal volume is often poorly represented by wafers from near the two end regions. A comparison of maps for stress, dislocation and EL2 patterns as all measured with a given wafer does not support hypotheses that EL2 is a direct consequence either of stress or of dislocations. Other mechanisms, such as segregation and melt dynamics, thus appear more likely to control the formation and distribution of EL2.},

  doi          = {10.1063/1.337670},

  url          = {https://www.osti.gov/biblio/5540801},
  journal      = {J. Appl. Phys.; (United States)},
number       = ,

  volume       = 60:1,

  place        = {United States},

  year         = {1986},

  month        = {7}

}

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