Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning method
In situ monitoring and suppression of damage and contamination induced by GaAs and AlGaAs reactive-ion-beam-etching (RIBE) have been investigated to establish clean surfaces, required for fabricating III--V compound optoelectronic integrated circuits (OEIC's). A novel ultrahigh-vacuum RIBE system with etched surface monitors and a surface cleaning gun has been developed for this purpose. Damage suppression with low energy (10--100 eV) RIBE was confirmed with an ideality factor in a Schottky diode. Removal of Cl contamination induced by Cl/sub 2/ plasma was established with temperature-controlled (200/sup 0/C) RIBE or heat treatment (400/sup 0/C) after RIBE. Furthermore, it was demonstrated for the first time that both GaAs and AlGaAs native oxide layers could be successfully removed simply with irradiations of H and Cl radical beam released from the novel, compact electron-cyclotron-resonance (ECR) plasma gun.
- Research Organization:
- Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakaharaku, Kawasaki 211, Japan
- OSTI ID:
- 5540355
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Vol. 4:3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of damage on GaAs in a reactive ion beam etching system using Schottky diodes
Damage induced by CHF/sub 3/+C/sub 2/F/sub 6/ plasma etching on Si-implanted GaAs(100)
Related Subjects
42 ENGINEERING
ALUMINIUM ARSENIDES
ETCHING
PHYSICAL RADIATION EFFECTS
GALLIUM ARSENIDES
INTEGRATED CIRCUITS
FABRICATION
CHLORINE IONS
DAMAGE
HEAT TREATMENTS
HYDROGEN IONS
ION BEAMS
ION COLLISIONS
SCHOTTKY BARRIER DIODES
SURFACE CLEANING
SURFACE CONTAMINATION
ULTRAHIGH VACUUM
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
CLEANING
COLLISIONS
CONTAMINATION
ELECTRONIC CIRCUITS
GALLIUM COMPOUNDS
IONS
MICROELECTRONIC CIRCUITS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE FINISHING
360605* - Materials- Radiation Effects
360601 - Other Materials- Preparation & Manufacture
420800 - Engineering- Electronic Circuits & Devices- (-1989)