External cavity semiconductor laser
This patent describes an external cavity diode laser system. It comprises a diode laser having a facet and a single active gain region of width D much greater than height H for emitting a single lobe of light and coupled to an external resonator having two ends and comprising beam shaping optics disposed between the ends of the resonator and an output coupling mirror positioned at the end of the resonator opposite the diode laser and optically aligned with the diode laser to focus light from the facet back upon the facet and including a mode aperture dimensioned such that only a single spatial mode of light will propagate in the system and wherein light propagated from the facet in two orthogonal planes travels through the optics in two different paths.
- Assignee:
- Massachusetts Inst. of Technology, Cambridge, MA (United States)
- Patent Number(s):
- US 5050179; A
- Application Number:
- PPN: US 7-341028
- OSTI ID:
- 5539005
- Resource Relation:
- Patent File Date: 20 Apr 1989
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dynamics, noise properties, and spectral characteristics of semiconductor lasers with external coupling
Phase locking of eight wide-aperture semiconductor laser diodes in one-dimensional and two-dimensional configurations in an external Talbot cavity