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Title: Progress in the optimization of n-type and p-type SiGe thermoelectric materials

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
DOI:https://doi.org/10.1063/1.43147· OSTI ID:5532967
;  [1]; ; ;  [2]
  1. Jet Propulsion Laboratory, 4800, Oak Grove Drive, Pasadena, California 91109 (United States)
  2. Thermotrex Technologies Corporation, 85, First Avenue, Waltham, Massachusetts 02254-9046 (United States)

A comprehensive experimental and theoretical work has been conducted in order to optimize the thermoelectric properties of Si[sub 80]Ge[sub 20] materials and reach the goal of a combined figure of merit value of 0.85[times]10[sup [minus]3] K[sup [minus]1] averaged over 600--1000 C temperature range. Improvement for the n-type material have been obtained by determining the optimum amounts of gallium and phosphorus dopants necessary to achieve optimum carrier mobility and concentration. The emphasis is now on the good reproducibility of these results through understanding and control of the processing parameters relating microstructure and composition to the transport properties. The optimum doping level has now been firmly established for p-type materials, and work is concentrating on the reduction in thermal conductivity. BN ultra fine particles have been successfully incorporated into fully dense samples and have resulted in desired improvement of the figure of merit. Efforts are being made to reproduce these encouraging results.

OSTI ID:
5532967
Report Number(s):
CONF-930103-; CODEN: APCPCS
Journal Information:
AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 271:2; Conference: 10. symposium on space nuclear power and propulsion, Albuquerque, NM (United States), 10-14 Jan 1993; ISSN 0094-243X
Country of Publication:
United States
Language:
English