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Title: Interdiffusion and structural relaxation in Mo/Si multilayer films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.340005· OSTI ID:5532432

Interdiffusion and structural change on annealing of sputter-deposited Mo/Si and Mo(N)/Si(N) multilayer thin films have been investigated over the temperature range from 674 to 1027 K. X-ray diffractometry shows that in the as-deposited Mo/Si multilayers the Mo is bcc with the stacking of (110) plane parallel to the substrate, and the Si is amorphous, while in the as-deposited Mo(N)/Si(N) multilayers, both Mo and Si nitrides are amorphous. The interdiffusivities have been determined from the decay rate of satellite peak intensity around (000). The activation energies for the interdiffusion in Mo/Si and Mo(N)/Si(N) multilayers are 105 +- 5 and 351 +- 88 kJ mol/sup -1/, respectively. A drastic decrease in the satellite peak intensity on annealing is observed in the Mo/Si multilayer films, which is interpreted to be due to interdiffusion and structural relaxation. On the other hand, a remarkable increase in the satellite intensity is found for the nitride multilayer films, which is explained by crystallization into ..beta..-Mo/sub 2/N/..cap alpha..-Si/sub 3/N/sub 4/. The modulation wavelength decreases by 8%--12% after anneal. The decrease in the thickness of annealed Mo/Si multilayer films is also found by a depth profilometer.

Research Organization:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
OSTI ID:
5532432
Journal Information:
J. Appl. Phys.; (United States), Vol. 63:4
Country of Publication:
United States
Language:
English