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Title: Material properties of high-quality GaAs epitaxial layers grown on Si substrates

Abstract

We report an investigation of the materials properties of GaAs on Si epitaxial layers. By using properly oriented substrates, we have found that a substantial reduction in the density of threading dislocations can be achieved. In the presence of steps, dislocations with their Burgers vectors in the (100) substrate plane are preferentially generated, which are more effective in accommodating lattice mismatch and do not thread into the epitaxial layer. We have also found that the density of threading dislocations can be reduced significantly by the use of GaAs/InGaAs pseudomorphic superlattices. Using these techniques, dislocation densities of as low as 10/sup 3/--10/sup 4/ cm/sup -2/ have been achieved in 2-..mu..m-thick GaAs on Si epitaxial layers. In growth on nominal (100) orientations, where it is known that single atomic steps dominate, we have found no evidence of antiphase domains by transmission electron microscopy or chemical etching. This result suggests that it may not be energetically favorable for antiphase domains to form in these samples. Alternatively antiphase domains may propagate along the )111) directions and annihilate one another. For GaAs/(Al,Ga)As double heterojunction (DH) laser structures on Si substrates, the dislocation control techniques have made possible electroluminescence intensity (spontaneous emission) within a factor ofmore » 2 of state-of-the-art DH lasers on GaAs (which for reference lased at a current threshold density of 600 A/cm/sup 2/). These results compare to within experimental determination. Electroluminescence intensities were also found to increase with increasing initial growth temperature. Stripe geometry lasers with room-temperature pulsed threshold currents as low as 170 mA for 10 x 240 ..mu..m/sup 2/ stripe have been obtained using these techniques.« less

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1101 W. Springfield Avenue, Urbana, Illinois 61801
OSTI Identifier:
5531811
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 60:5
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; GALLIUM ARSENIDES; DISLOCATIONS; ELECTROLUMINESCENCE; SEMICONDUCTOR LASERS; FABRICATION; CRYSTAL DEFECTS; ETCHING; HETEROJUNCTIONS; LAYERS; SILICON; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTS; GALLIUM COMPOUNDS; JUNCTIONS; LASERS; LINE DEFECTS; LUMINESCENCE; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SURFACE FINISHING; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Fischer, R, Morkoc-cedilla, H, Neumann, D A, Zabel, H, Choi, C, Otsuka, N, Longerbone, M, and Erickson, L P. Material properties of high-quality GaAs epitaxial layers grown on Si substrates. United States: N. p., 1986. Web. doi:10.1063/1.337253.
Fischer, R, Morkoc-cedilla, H, Neumann, D A, Zabel, H, Choi, C, Otsuka, N, Longerbone, M, & Erickson, L P. Material properties of high-quality GaAs epitaxial layers grown on Si substrates. United States. doi:10.1063/1.337253.
Fischer, R, Morkoc-cedilla, H, Neumann, D A, Zabel, H, Choi, C, Otsuka, N, Longerbone, M, and Erickson, L P. Mon . "Material properties of high-quality GaAs epitaxial layers grown on Si substrates". United States. doi:10.1063/1.337253.
@article{osti_5531811,
title = {Material properties of high-quality GaAs epitaxial layers grown on Si substrates},
author = {Fischer, R and Morkoc-cedilla, H and Neumann, D A and Zabel, H and Choi, C and Otsuka, N and Longerbone, M and Erickson, L P},
abstractNote = {We report an investigation of the materials properties of GaAs on Si epitaxial layers. By using properly oriented substrates, we have found that a substantial reduction in the density of threading dislocations can be achieved. In the presence of steps, dislocations with their Burgers vectors in the (100) substrate plane are preferentially generated, which are more effective in accommodating lattice mismatch and do not thread into the epitaxial layer. We have also found that the density of threading dislocations can be reduced significantly by the use of GaAs/InGaAs pseudomorphic superlattices. Using these techniques, dislocation densities of as low as 10/sup 3/--10/sup 4/ cm/sup -2/ have been achieved in 2-..mu..m-thick GaAs on Si epitaxial layers. In growth on nominal (100) orientations, where it is known that single atomic steps dominate, we have found no evidence of antiphase domains by transmission electron microscopy or chemical etching. This result suggests that it may not be energetically favorable for antiphase domains to form in these samples. Alternatively antiphase domains may propagate along the )111) directions and annihilate one another. For GaAs/(Al,Ga)As double heterojunction (DH) laser structures on Si substrates, the dislocation control techniques have made possible electroluminescence intensity (spontaneous emission) within a factor of 2 of state-of-the-art DH lasers on GaAs (which for reference lased at a current threshold density of 600 A/cm/sup 2/). These results compare to within experimental determination. Electroluminescence intensities were also found to increase with increasing initial growth temperature. Stripe geometry lasers with room-temperature pulsed threshold currents as low as 170 mA for 10 x 240 ..mu..m/sup 2/ stripe have been obtained using these techniques.},
doi = {10.1063/1.337253},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 60:5,
place = {United States},
year = {1986},
month = {9}
}