Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs

Gaber, A; Zillgen, H; Ehrhart, P; Partyka, P; Averback, R S

doi:10.1063/1.366302

Title: Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs

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Abstract

X-ray diffraction was employed to investigate damage accumulation and the subsequent thermally activated annealing reactions in AlAs layers on GaAs substrates. Irradiations were performed at 4.6 K with 2.5 MeV electrons up to a total dose of 2{times}10{sup 19} electrons/cm{sup 2}. The irradiation-induced increase of the lattice parameter amounts to about half of the changes observed in the GaAs substrates. There is a major annealing step near room temperature, a rather continuous annealing up to 500 K, and a final recovery stage between 700 and 900 K. The observations are discussed in relation to the resistance of AlAs against amorphization under ion irradiation. {copyright} {ital 1997 American Institute of Physics.}

Authors:

Gaber, A; Zillgen, H; Ehrhart, P ^[1]; Partyka, P; Averback, R S ^[2]

Institut fuer Festkoerperforschung, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)
Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

Publication Date:: Mon Dec 01 00:00:00 EST 1997

OSTI Identifier:: 552958

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 82; Journal Issue: 11; Other Information: PBD: Dec 1997

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; RADIATION EFFECTS; ALUMINIUM COMPOUNDS; X-RAY DIFFRACTION; INTERSTITIALS; POINT DEFECTS; LATTICE PARAMETERS; ELECTRON BEAMS; MEV RANGE 01-10; ANNEALING; FRENKEL DEFECTS

Citation Formats


                    Gaber, A, Zillgen, H, Ehrhart, P, Partyka, P, and Averback, R S. Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs.  United States: N. p., 1997. 
        Web.  doi:10.1063/1.366302.

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                    Gaber, A, Zillgen, H, Ehrhart, P, Partyka, P, & Averback, R S. Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs.  United States.  https://doi.org/10.1063/1.366302

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                    Gaber, A, Zillgen, H, Ehrhart, P, Partyka, P, and Averback, R S. 1997.  
        "Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs".  United States.  https://doi.org/10.1063/1.366302.

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@article{osti_552958,

  title        = {Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs},

  author       = {Gaber, A and Zillgen, H and Ehrhart, P and Partyka, P and Averback, R S},

  abstractNote = {X-ray diffraction was employed to investigate damage accumulation and the subsequent thermally activated annealing reactions in AlAs layers on GaAs substrates. Irradiations were performed at 4.6 K with 2.5 MeV electrons up to a total dose of 2{times}10{sup 19} electrons/cm{sup 2}. The irradiation-induced increase of the lattice parameter amounts to about half of the changes observed in the GaAs substrates. There is a major annealing step near room temperature, a rather continuous annealing up to 500 K, and a final recovery stage between 700 and 900 K. The observations are discussed in relation to the resistance of AlAs against amorphization under ion irradiation. {copyright} {ital 1997 American Institute of Physics.}},

  doi          = {10.1063/1.366302},

  url          = {https://www.osti.gov/biblio/552958},
  journal      = {Journal of Applied Physics},
number       = 11,

  volume       = 82,

  place        = {United States},

  year         = {Mon Dec 01 00:00:00 EST 1997},

  month        = {Mon Dec 01 00:00:00 EST 1997}

}

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