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Title: Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI/sub 2/ chalcopyrite compounds

Abstract

Apparatus is disclosed for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI/sub 2/ chalcopyrite ternary materials which is vacuum deposited in a thin ''composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns (approx. = 2.5 ..mu..m to approx. = 5.0 ..mu..m) and wherein the lower region of the photovoltaic active material preferably comprises a low resisitivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence ofmore » voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.« less

Inventors:
;
Publication Date:
OSTI Identifier:
5525583
Patent Number(s):
US 4392451
Assignee:
The Boeing Co.
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 2 Jul 1981; Other Information: PAT-APPL-278343
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CHALCOPYRITE; VAPOR DEPOSITED COATINGS; SOLAR CELLS; FABRICATION; HETEROJUNCTIONS; EFFICIENCY; P-N JUNCTIONS; THIN FILMS; CHALCOGENIDES; COATINGS; COPPER COMPOUNDS; COPPER SULFIDES; DIRECT ENERGY CONVERTERS; EQUIPMENT; FILMS; IRON COMPOUNDS; IRON SULFIDES; JUNCTIONS; MINERALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT; SULFIDE MINERALS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Mickelsen, R A, and Chen, W S. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI/sub 2/ chalcopyrite compounds. United States: N. p., 1983. Web.
Mickelsen, R A, & Chen, W S. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI/sub 2/ chalcopyrite compounds. United States.
Mickelsen, R A, and Chen, W S. Tue . "Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI/sub 2/ chalcopyrite compounds". United States.
@article{osti_5525583,
title = {Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI/sub 2/ chalcopyrite compounds},
author = {Mickelsen, R A and Chen, W S},
abstractNote = {Apparatus is disclosed for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI/sub 2/ chalcopyrite ternary materials which is vacuum deposited in a thin ''composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns (approx. = 2.5 ..mu..m to approx. = 5.0 ..mu..m) and wherein the lower region of the photovoltaic active material preferably comprises a low resisitivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {7}
}