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Title: An MBE growth facility for real-time in situ synchrotron x-ray topography studies of strained-layer III--V epitaxial materials

Journal Article · · Review of Scientific Instruments; (United States)
DOI:https://doi.org/10.1063/1.1142675· OSTI ID:5520533
; ; ; ; ; ; ;  [1]; ;  [2]; ;  [3]; ; ;  [4]
  1. DRA Electronics Division (RSRE, Malvern), St. Andrews Road, Malvern, Worcs WR14 3PS (United Kingdom)
  2. SERC Daresbury Laboratory, Warrington WA4 4AD (United Kingdom)
  3. Physics Department, University of Durham, South Road, Durham DH1 3LE (United Kingdom)
  4. Department of Applied Physics, University of Hull, Hull HU6 7RX (United Kingdom)

This paper describes a unique combined UHV MBE growth x-ray topography facility designed to allow the first real-time synchrotron radiation x-ray topography study of strained-layer III--V growth processes. This system will enable unambiguous determination of dislocation nucleation and multiplication processes as a function of controlled variations in growth conditions, and also during post-growth thermal processing. The planned experiments have placed very stringent demands upon the engineering design of the system, and design details regarding the growth chamber; sample manipulator, x-ray optics, and real-time imaging systems are described. Results obtained during a feasibility study are also presented.

OSTI ID:
5520533
Journal Information:
Review of Scientific Instruments; (United States), Vol. 63:1; ISSN 0034-6748
Country of Publication:
United States
Language:
English