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Title: Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

Abstract

In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40/sup 0/ and 70/sup 0/ and preferably between 55/sup 0/ and 65/sup 0/ when the oxide is tin oxide and between 40/sup 0/ and 70/sup 0/ when the oxide deposited is indium tin oxide. 10 claims.

Inventors:
;
Publication Date:
OSTI Identifier:
5516490
Patent Number(s):
US 4177093
Assignee:
Exxon Research and Engineering Co. TIC; ERA-05-015175; EDB-80-039512
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 22 Nov 1978
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; INDIUM OXIDES; VAPOR PLATING; SILICON SOLAR CELLS; FABRICATION; TIN OXIDES; DEPOSITION; EVAPORATION; INCIDENCE ANGLE; N-TYPE CONDUCTORS; SILICON; SUBSTRATES; CHALCOGENIDES; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; INDIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PLATING; SEMICONDUCTOR MATERIALS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; SURFACE COATING; TIN COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Feng, T., and Ghosh, A.K. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide. United States: N. p., 1979. Web.
Feng, T., & Ghosh, A.K. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide. United States.
Feng, T., and Ghosh, A.K. Tue . "Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide". United States.
@article{osti_5516490,
title = {Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide},
author = {Feng, T. and Ghosh, A.K.},
abstractNote = {In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40/sup 0/ and 70/sup 0/ and preferably between 55/sup 0/ and 65/sup 0/ when the oxide is tin oxide and between 40/sup 0/ and 70/sup 0/ when the oxide deposited is indium tin oxide. 10 claims.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {12}
}