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Title: Dependence of the yield of the reaction Si/sup 30/(e, e'p)Al/sup 29/ on the orientation of a silicon single crystal

Journal Article · · Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States)
OSTI ID:5515100

Bremsstrahlung associated with electron channeling in a Si single crystal is studied.(AIP)

Research Organization:
Physicotechnical Institute, Academy of Sciences of the Ukrainian SSR, Khar'kov
OSTI ID:
5515100
Journal Information:
Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States), Vol. 30:1
Country of Publication:
United States
Language:
English

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