Electronic transport and lasing in microstructures

Technical Report · Thu Jul 25 00:00:00 EDT 1991

OSTI ID:5511871

Lax, M

We consider the interaction of hot carriers with hot phonons in a quantum well. Transport is considered in the transverse direction and tunneling through the well barriers. Time-dependent transport effects down to the femto-second regime are included, as are strong and/or microwave fields, with negative resistance effects. Resonant tunneling assisted by phonon relaxation and infra-red radiation are explored. Partition noise in semiconductor lasers has been considered.

• Research Organization: City Coll., New York, NY (United States). Dept. of Physics
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: FG02-84ER45058
• OSTI ID: 5511871
• Report Number(s): DOE/ER/45058-7; ON: DE91016751
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
42 ENGINEERING
CHARGED-PARTICLE TRANSPORT
PHONONS
ELECTRON COLLISIONS
SEMICONDUCTOR LASERS
FEEDBACK
LIGHT SCATTERING
MICROSTRUCTURE
PROGRESS REPORT
TUNNEL EFFECT
COLLISIONS
CRYSTAL STRUCTURE
DOCUMENT TYPES
LASERS
QUASI PARTICLES
RADIATION TRANSPORT
SCATTERING
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
656002* - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)
426002 - Engineering- Lasers & Masers- (1990-)