skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Large area silicon sheet by EFG. Fourth quarterly report, October 1, 1979-December 31, 1979

Abstract

In Machine No. 1, studies concerning the influence of gas ambients on the properties of the ribbon grown from resistance heated machines have continued. It has been demonstrated that material grown in a CO/sub 2/-containing ambient can be processed so that cell efficiencies of approx. 12% (AM1) result. Machine 3B, the multiple furnace, is still in preparation for its first 10 cm ribbon multiple run. In Machine 17, full-width growth at 3 to 4 cm/min is now routine, and quality-related work will commence.

Authors:
Publication Date:
Research Org.:
Mobil Tyco Solar Energy Corp., Waltham, MA (USA)
OSTI Identifier:
5509654
Report Number(s):
DOE/JPL/954355-79/4
DOE Contract Number:  
NAS-7-100-954355
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; CRYSTAL GROWTH; CARBON DIOXIDE; CARBON MONOXIDE; DIES; EFG METHOD; ELECTRICAL PROPERTIES; EQUIPMENT; FURNACES; MODIFICATIONS; OPTIMIZATION; PERFORMANCE; SILICON SOLAR CELLS; CARBON COMPOUNDS; CARBON OXIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIRECT ENERGY CONVERTERS; ELEMENTS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Wald, F. V.. Large area silicon sheet by EFG. Fourth quarterly report, October 1, 1979-December 31, 1979. United States: N. p., 1980. Web. doi:10.2172/5509654.
Wald, F. V.. Large area silicon sheet by EFG. Fourth quarterly report, October 1, 1979-December 31, 1979. United States. https://doi.org/10.2172/5509654
Wald, F. V.. Thu . "Large area silicon sheet by EFG. Fourth quarterly report, October 1, 1979-December 31, 1979". United States. https://doi.org/10.2172/5509654. https://www.osti.gov/servlets/purl/5509654.
@article{osti_5509654,
title = {Large area silicon sheet by EFG. Fourth quarterly report, October 1, 1979-December 31, 1979},
author = {Wald, F. V.},
abstractNote = {In Machine No. 1, studies concerning the influence of gas ambients on the properties of the ribbon grown from resistance heated machines have continued. It has been demonstrated that material grown in a CO/sub 2/-containing ambient can be processed so that cell efficiencies of approx. 12% (AM1) result. Machine 3B, the multiple furnace, is still in preparation for its first 10 cm ribbon multiple run. In Machine 17, full-width growth at 3 to 4 cm/min is now routine, and quality-related work will commence.},
doi = {10.2172/5509654},
url = {https://www.osti.gov/biblio/5509654}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {5}
}