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Title: At-wavelength characterization of an extreme ultraviolet camera from low to mid-spatial frequencies with a compact laser plasma source

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
DOI:https://doi.org/10.1116/1.589667· OSTI ID:550471
;  [1];  [2]
  1. Advanced Electronics Manufacturing Department, Sandia National Laboratories, MS 9409, Livermore, California 94551-0969 (United States)
  2. Department of Electrical Engineering and Computer Science, University of California-Berkeley, California 94720 (United States)

The final alignment and characterization of an extreme ultraviolet (EUV) lithographic projection optics system must be performed at the operating wavelength in order to account for errors associated with the combined effect of multilayer coating and substrate fabrication error. Two complementary metrology techniques have been developed which can operate on a compact laser plasma source: EUV lateral shear interferometry (LSI) and aerial image monitoring (AIM). LSI quantifies residual low spatial frequency wave front errors associated with the {open_quotes}figure{close_quotes} of each optical element. To characterize the effect of mid-spatial frequency errors that lead to scatter in the image plane, an EUV aerial image monitor was employed. EUV interferometry was compared to visible light interferometry measurements of the optical system and was found to be in reasonable agreement for low spatial frequency errors. The contrast as measured by AIM and photoresist exposures indicates an additional reduction of contrast associated with scatter due to large mid-spatial frequency errors. {copyright} {ital 1997 American Vacuum Society.}

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
550471
Report Number(s):
CONF-9705218-; ISSN 0734-211X; TRN: 9723M0095
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 15, Issue 6; Conference: 41. international conference on electron, ion, and photon beam technology and nanofabrication, Dana Point, CA (United States), 27-30 May 1997; Other Information: PBD: Nov 1997
Country of Publication:
United States
Language:
English