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Title: Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions

Abstract

The defects produced on a graphite surface by single ion impact using highly charged Ar ions (charge state q{le}8) is investigated by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The defect looks like a protrusion in the STM image, while it is flat in the AFM image. From these two contrasting images, the defects are considered to be due to the increase in the local charge density of state at the surface caused by carbon atom sputtering. The average value for the defect size increases remarkably with the charge state of incident Ar ions. This is explained by the enhancement of potential sputtering due to the Coulomb repulsion between surface holes which are generated by the neutralization of highly charged Ar ions. {copyright} {ital 1997 American Institute of Physics.}

Authors:
 [1];  [2]; ;  [3]; ;  [4]
  1. Field and Reaction, PREST, Japan Science and Technology Corporation (JST), Kawaguchi-shi, Saitama 332 (Japan)
  2. Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185 (Japan)
  3. Institute of Laser Science, University of Electro-Communications, Choufu-shi, Tokyo 182 (Japan)
  4. Faculty of Science, Tokyo Metropolitan University, Hachioji-shi, Tokyo 192-03 (Japan)
Publication Date:
OSTI Identifier:
550447
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 82; Journal Issue: 12; Other Information: PBD: Dec 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GRAPHITE; RADIATION EFFECTS; MULTICHARGED IONS; CRYSTAL DEFECTS; ARGON IONS; MICROSCOPY; SPUTTERING; KEV RANGE 01-10

Citation Formats

Mochiji, K, Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185, Yamamoto, S, Shimizu, H, Ohtani, S, Seguchi, T, and Kobayashi, N. Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions. United States: N. p., 1997. Web. doi:10.1063/1.366470.
Mochiji, K, Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185, Yamamoto, S, Shimizu, H, Ohtani, S, Seguchi, T, & Kobayashi, N. Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions. United States. https://doi.org/10.1063/1.366470
Mochiji, K, Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185, Yamamoto, S, Shimizu, H, Ohtani, S, Seguchi, T, and Kobayashi, N. Mon . "Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions". United States. https://doi.org/10.1063/1.366470.
@article{osti_550447,
title = {Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions},
author = {Mochiji, K and Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185 and Yamamoto, S and Shimizu, H and Ohtani, S and Seguchi, T and Kobayashi, N},
abstractNote = {The defects produced on a graphite surface by single ion impact using highly charged Ar ions (charge state q{le}8) is investigated by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The defect looks like a protrusion in the STM image, while it is flat in the AFM image. From these two contrasting images, the defects are considered to be due to the increase in the local charge density of state at the surface caused by carbon atom sputtering. The average value for the defect size increases remarkably with the charge state of incident Ar ions. This is explained by the enhancement of potential sputtering due to the Coulomb repulsion between surface holes which are generated by the neutralization of highly charged Ar ions. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.366470},
url = {https://www.osti.gov/biblio/550447}, journal = {Journal of Applied Physics},
number = 12,
volume = 82,
place = {United States},
year = {1997},
month = {12}
}