Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic In{sub x}Ga{sub 1{minus}x}As/InP heterostructure
- Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)
Superconducting Nb{endash}In{sub 0.53}Ga{sub 0.47}As/In{sub 0.77}Ga{sub 0.23}As/InP{endash}Nb contacts with an electrode separation of 450 nm were fabricated. Due to the high mobility of the two-dimensional electron gas, the current transport can be described within the clean limit regime. At 0.3 K a critical current of 3.8 {mu}A was obtained for 6 {mu}m wide contacts leading to a characteristic voltage of 190 {mu}V. The decrease of the critical current with increasing temperature can be explained by a theory developed by A. Chrestin, T. Matsuyama, and U. Merkt [Phys. Rev. B {bold 49}, 498 (1994)], which takes {delta}-shaped barriers at the superconductor/semiconductor interfaces into account. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 550441
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 24; Other Information: PBD: Dec 1997
- Country of Publication:
- United States
- Language:
- English
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