New devices using ferroelectric thin films
Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several new devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magneto-optic thin film devices. Some properties of PZT thin films and of new devices based on those properties are described in this paper. 15 refs., 5 figs., 1 tab.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5485384
- Report Number(s):
- SAND-89-1607C; CONF-891205-1; ON: DE90000789
- Resource Relation:
- Conference: IEEE international electron devices meeting, Washington, DC (USA), 3-6 Dec 1989
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
PLZT
BIREFRINGENCE
PHOTOCURRENTS
PHOTOSENSITIVITY
PZT
FERROELECTRIC MATERIALS
OPTICAL PROPERTIES
OPTICAL SCANNERS
THIN FILM STORAGE DEVICES
THIN FILMS
CURRENTS
ELECTRIC CURRENTS
ELECTRONIC EQUIPMENT
EQUIPMENT
FILMS
LANTHANUM COMPOUNDS
LEAD COMPOUNDS
MEMORY DEVICES
OPTICAL EQUIPMENT
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RARE EARTH COMPOUNDS
REFRACTION
SENSITIVITY
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZIRCONATES
ZIRCONIUM COMPOUNDS
360603* - Materials- Properties
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)