Improved substrate structures for InP-based devices

Patent Application · Fri Sep 30 00:00:00 EDT 1988

OSTI ID:5480625

Wanlass, M; Sheldon, P

A substrate structure for an InP-based semiconductor device having an InP-based film is disclosed. The substrate structure includes a substrate region having a light-weight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice matched at its one end to the GaAs layer and substantially lattice matched at its opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region and the InP-based device. 1 fig.

• Research Organization: Solar Energy Research Inst., Golden, CO (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7251484
• Application Number: ON: DE91017349; PPN: US 7-251484
• OSTI ID: 5480625
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
SEMICONDUCTOR DEVICES
FABRICATION
SUBSTRATES
DESIGN
COST
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
INVENTIONS
LAYERS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
360601* - Other Materials- Preparation & Manufacture
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)