Defects in silicon after B{sup +} implantation: A study using a positron-beam technique, Rutherford backscattering, secondary neutral mass spectroscopy, and infrared absorption spectroscopy
- Fachbereich Physik der Martin-Luther-Universitaet Halle-Wittenberg, D-06099 Halle, Saale (Germany)
- Fachbereich Physik, Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)
- Universitaet Leipzig, Institut fuer Experimentalphysik II, Linnestrasse 5, D-04103 Leipzig (Germany)
The distribution of defects in Si (100), (110), and (111) after boron implantation and annealing processes was measured. Boron implantation was carried out at 300 K with three energies (50, 150, and 300 keV or 30, 90, and 180 keV) in multiple mode to obtain a homogeneously damaged layer. Ion fluences ranged from 10{sup 14} to 10{sup 16}B{sup +}cm{sup {minus}2}. The profile of vacancy-type defects was detected by variable-energy positron annihilation spectroscopy (VEPAS). The defect concentration increases proportionally to {radical}({Phi}), where {Phi} is the ion fluence. The line-shape parameter S of the positron-electron annihilation peak in the implanted layer increases with {Phi}. The divacancy (2v) concentration observed by infrared absorption spectroscopy (IRAS) was nearly constant in all samples (about 1.8{times}10{sup 19}cm{sup {minus}3}). It can be concluded that divacancies are not the main vacancy-type defect and the increasing S parameter must be attributed to additional defects of larger open volume. A value S{sub defect}/S{sub bulk}=1.048 was fitted for the dominating defect, where S{sub 2v}/S{sub bulk}=1.04. Rutherford backscattering (RBS) measurements were carried out to detect the distribution of displaced lattice atoms. The defect-production rate was proportional to {radical}({Phi}) again. The concentration profiles of implanted ions were measured with sputtered neutral mass spectrometry (SNMS). In addition, Monte Carlo calculations were done with the TRIM code. The nearly homogenous defect distributions up to a depth of 1 {mu}m found by VEPAS, TRIM, and RBS are in very good accordance. The samples were annealed up to 1150 K. It was found that the annealing behavior of vacancylike defects depends on the implantation dose and on the sample material under investigation. The divacancies are annealed at 470 K as measured by IRAS. An annealing stage of vacancy clusters at 725 K was observed in all samples by VEPAS. (Abstract Truncated)
- OSTI ID:
- 547358
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 56, Issue 3; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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