Far-infrared photoresponse of the InAs/GaInSb superlattice

Journal Article · Mon Aug 12 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105255· OSTI ID:5469707

Campbell, I H; Sela, I; Laurich, B K; Smith, D L ^[1]; Bolognesi, C R; Samoska, L A; Gossard, A C; Kroemer, H ^[2]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (US)
2. University of California at Santa Barbara, Santa Barbara, California 93106 (US)

We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared ({lambda}{similar to}10 {mu}m) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time-resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron-hole recombination via deep defect levels and the slow, 2 {mu}s decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site.

• OSTI ID: 5469707
• Journal Information: Applied Physics Letters; (United States), Vol. 59:7; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ANTIMONIDES
INFRARED SPECTRA
INDIUM ANTIMONIDES
INDIUM ARSENIDES
SUPERLATTICES
PHOTOCONDUCTIVITY
EXCITONS
PHOTODETECTORS
RECOMBINATION
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SPECTRA
360603* - Materials- Properties