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Title: Nonvolatile semiconductor memory having three dimension charge confinement

Abstract

This patent describes a layered semiconductor device with a nonvolatile three dimensional memory which comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.

Inventors:
; ; ; ;
Publication Date:
OSTI Identifier:
5464077
Patent Number(s):
US 5055890; A
Application Number:
PPN: US 7-469995
Assignee:
Dept. of Energy, Washington, DC (United States)
Resource Type:
Patent
Resource Relation:
Patent File Date: 25 Jan 1990
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; FIELD EFFECT TRANSISTORS; FABRICATION; HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS; MEMORY DEVICES; CHARGE CARRIERS; CHARGE-COUPLED DEVICES; JUNCTIONS; MATERIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-); 360600 - Other Materials

Citation Formats

Dawson, L R, Osbourn, G C, Peercy, P S, Weaver, H T, and Zipperian, T E. Nonvolatile semiconductor memory having three dimension charge confinement. United States: N. p., 1991. Web.
Dawson, L R, Osbourn, G C, Peercy, P S, Weaver, H T, & Zipperian, T E. Nonvolatile semiconductor memory having three dimension charge confinement. United States.
Dawson, L R, Osbourn, G C, Peercy, P S, Weaver, H T, and Zipperian, T E. Tue . "Nonvolatile semiconductor memory having three dimension charge confinement". United States.
@article{osti_5464077,
title = {Nonvolatile semiconductor memory having three dimension charge confinement},
author = {Dawson, L R and Osbourn, G C and Peercy, P S and Weaver, H T and Zipperian, T E},
abstractNote = {This patent describes a layered semiconductor device with a nonvolatile three dimensional memory which comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {10}
}