Nonvolatile semiconductor memory having three dimension charge confinement
This patent describes a layered semiconductor device with a nonvolatile three dimensional memory which comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 5055890; A
- Application Number:
- PPN: US 7-469995
- OSTI ID:
- 5464077
- Resource Relation:
- Patent File Date: 25 Jan 1990
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
FIELD EFFECT TRANSISTORS
FABRICATION
HETEROJUNCTIONS
SEMICONDUCTOR MATERIALS
MEMORY DEVICES
CHARGE CARRIERS
CHARGE-COUPLED DEVICES
JUNCTIONS
MATERIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360600 - Other Materials