Si-photocell with an ultrashallow junction by gas immersion laser doping and its characteristics

Journal Article · Tue Sep 01 00:00:00 EDT 1987 · Chin. Phys. Lasers; (United States)

OSTI ID:5449734

Zhengzhuo, Zhou; Ding, Li; Mingxin, Qiu; Yuliang, Zhou

By means of GILD (gas immersion laser doping) on the surface of n-type Si samples, with BBr/sub 3/ vapor as the working material, Si-photocells doped with boron have been fabricated. The maximum doping concentration is 1.2 x 10/sup 21/ B/sup +//cm/sup 3/ near the surface, the junction depth is 0.08 ..mu..m at 10/sup 17/ B/sup +//cm/sup 3/, and the conversion efficiency is about 9.5% without antireflection coatings.

• Research Organization: Shanghai Institute of Laser Technology, Shanghai
• OSTI ID: 5449734
• Journal Information: Chin. Phys. Lasers; (United States), Vol. 14:9
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
FABRICATION
QUANTUM EFFICIENCY
ANTIREFLECTION COATINGS
BORON ADDITIONS
CRYSTAL DOPING
DESIGN
N-TYPE CONDUCTORS
VAPORS
ALLOYS
BORON ALLOYS
COATINGS
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
FLUIDS
GASES
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion