Uniaxial Fermi-surface nesting and spin-density-wave transition in the heavy-fermion compound Ce(Ru{sub 0.85}Rh{sub 0.15}){sub 2}Si{sub 2}

Journal Article · Sat Nov 01 00:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.11092· OSTI ID:544916

Murayama, S; Sekine, C; Yokoyanagi, A; Hoshi, K ^[1]; Onuki, Y ^[2]

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1. Department of Materials Science, Muroran Institute of Technology, Muroran, Hokkaido 050 (Japan)
2. Department of Physics, Faculty of Science, Osaka University, Toyonaka, Osaka 560 (Japan)

Resistivity parallel and perpendicular to the tetragonal c axis of the antiferromagnetic heavy-fermion compound Ce(Ru{sub 1{minus}x}Rh{sub x}){sub 2}Si{sub 2} for x=0.15 has been measured in various fields along the c axis of the single crystal. A sharp upturn is observed just below the N{acute e}el temperature T{sub N} only in the parallel direction. This is interpreted in terms of partial gapping of the Fermi surface along the uniaxial c direction. The specific heat and susceptibility below T{sub N} are, respectively, analyzed into two independent contributions in the low-temperature limit: one is an exponential contribution of the gapped part of the Fermi surface with the energy gap about 10 K, and the other is a residual heavy-fermion contribution due to the remaining ungapped part of about 65{percent}. These facts suggest an itinerant spin-density-wave transition based on Fermi-surface nesting in a heavy-electron band. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 544916
• Journal Information: Physical Review, B: Condensed Matter, Vol. 56, Issue 17; Other Information: PBD: Nov 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CERIUM SILICIDES
FERMI LEVEL
ELECTRIC CONDUCTIVITY
RHODIUM ALLOYS
RUTHENIUM ALLOYS
CERIUM ALLOYS
SILICON ALLOYS
SPIN WAVES
FERMIONS
ENERGY GAP
SPECIFIC HEAT
ELECTRONIC STRUCTURE
NEEL TEMPERATURE
ANTIFERROMAGNETIC MATERIALS
MAGNETIC SUSCEPTIBILITY