Effect of base doping on the electrical and photoelectric properties of the thin-film Cu/sub 2/S-CdS heterojunction

Journal Article · Sat Jan 01 00:00:00 EST 1977 · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)

OSTI ID:5447675

Umarov, G Ya; Akramov, Kh T; Razykov, T M; Teshabaev, A T

The effect of the concentration of dopands (indium and gallium) in CdS in the range 10/sup 12/ < Nd < 10/sup 17/ cm/sup -3/ on the characteristics of the heterojunctions and the photovoltaic parameters of the thin-film Cu/sub 2/S-CdS heterojunction produced by the gas-transport method have been investigated. The photo-emf and the spectral sensitivity of the heterosystem were found to depend on the degree of doping. It is shown that at high doping levels, the main contribution to the photovoltaic effect is due to photoexcited carriers in the barrier layer. The mechanism responsible for the crossing of the dark and light current-voltage characteristics is elucidated and it is suggested that it is due to the photoconductivity of the base.

• Research Organization: State Univ., Tashkent, USSR
• OSTI ID: 5447675
• Journal Information: Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Vol. 13:3; Other Information: Translated from Geliotekhnika; 13: No. 3, 20-24(1977)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM SULFIDE SOLAR CELLS
CRYSTAL DOPING
ELECTRICAL PROPERTIES
SPECTRAL RESPONSE
CADMIUM SULFIDES
COPPER SULFIDES
DEPLETION LAYER
FILMS
GALLIUM
INDIUM
JUNCTIONS
OPTICAL PROPERTIES
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
CADMIUM COMPOUNDS
CHALCOGENIDES
COPPER COMPOUNDS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELEMENTS
EQUIPMENT
INORGANIC PHOSPHORS
LAYERS
METALS
PHOSPHORS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion