Lead-strontium-chalcogenide diode laser

Patent · Tue Jan 26 00:00:00 EST 1988

OSTI ID:5440923

Partin, D L

A large optical cavity quantum well double heterojunction semiconductor infrared diode laser is described having an active region layer sandwiched between two contiguous layers of monocrystalline semiconductive material. The laser exhibits current carrier and optical confinement for its active region layer but also exhibits increased operating temperature due to close lattice matching of face centered cubic monocrystalline layers forming the double heterojunctions. The laser comprises a monocrystalline buffer layer of a given conductivity type lead salt semiconductor containing strontium, selenium that has an energy band gap greater than, an index of refraction lesser than, and a lattice constant substantially equal to predetermined values of the active region layer, a monocrystalline active region layer on the buffer layer of a lead salt semiconductor containing a pn junction that has the predetermined energy and gap, index of refraction and lattice constant, and a confinement layer on the active region layer an opposite conductivity type lead salt semiconductor containing lesser amounts and smaller proportions of strontium and selenium that has an energy band gap greater than, an index of refraction smaller than, and a lattice constant substantially equal to the predetermined values.

• Assignee: General Motors Corp., Detroit, MI
• Patent Number(s): US 4722087
• OSTI ID: 5440923
• Resource Relation: Patent File Date: Filed date 11 Aug 1986
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
SEMICONDUCTOR LASERS
DESIGN
HETEROJUNCTIONS
CHALCOGENIDES
ENERGY GAP
INFRARED RADIATION
LASER CAVITIES
LEAD
MONOCRYSTALS
OPTICAL SYSTEMS
P-N JUNCTIONS
REFRACTIVITY
SELENIUM
SEMICONDUCTOR DIODES
STRONTIUM
ALKALINE EARTH METALS
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
JUNCTIONS
LASERS
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
420300* - Engineering- Lasers- (-1989)
360603 - Materials- Properties