Single crystal growth and characterization of NiSe{sub 2}

Journal Article · Wed Oct 01 00:00:00 EDT 1997 · Materials Research Bulletin

DOI:https://doi.org/10.1016/S0025-5408(97)00125-6· OSTI ID:544089

Wang, P; Somasundaram, P; Honig, J M; Pekarek, T M ^[1]

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1. Purdue Univ., West Lafayette, IN (United States)

A method is described for growth of single crystals of NiSe{sub 2} from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace. The electrical and magnetic properties of the crystals are briefly described; no prior measurements of resistivity have been reported below room temperature. A theoretical analysis shows that NiS{sub 1.93} is a metal exhibiting weak correlation effects.

• OSTI ID: 544089
• Journal Information: Materials Research Bulletin, Vol. 32, Issue 10; Other Information: PBD: Oct 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRICAL PROPERTIES
MAGNETIC PROPERTIES
NICKEL SELENIDES
MONOCRYSTALS
STOICHIOMETRY
CHALCOGENIDES
X-RAY DIFFRACTION
ELECTRIC CONDUCTIVITY
MAGNETIC SUSCEPTIBILITY