Induced phonon-sideband laser operation of large-quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures (L/sub z/ approx. 200--500 A)
Data are presented on photopumped metallorganic chemically vapor-deposited Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructures with active regions consisting of a large GaAs quantum well (L/sub z/1approx.200, 500 A) coupled to a phonon generating array of seven small GaAs wells (L/sub z/2approx.50 A). Phonon-sideband laser operation below the confined-carrier transitions of the large GaAs quantum well(s) is induced by the large number of phonons generated in the smaller GaAs wells. The induced phonon-sideband laser operation (of a larger quantum well by an array of smaller wells) leads to a measurement of the energy difference between the first-state light- and heavy-hole energies of a 200-A GaAs quantum well (4.9 meV) and directly to the GaAs L0-phonon energy h..omega../sub L/0approx. =41.0-4.9=36.1 meV.
- Research Organization:
- Rockwell International, Electronics Research Center, Anaheim, California 92803
- OSTI ID:
- 5439401
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 37:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
PHONONS
ALUMINIUM ARSENIDES
CHARGE CARRIERS
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
OPTICAL PUMPING
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)