Deposition of silicon carbide using the chemical vapor composites process: Process characterization and comparison with RASSPVDN model predictions

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Journal of Materials Research; (United States)

DOI:https://doi.org/10.1557/JMR.1993.1651· OSTI ID:5439127

Allendorf, M D; Hurt, R H; Yang, N ^[1]; Reagan, P; Robbins, M ^[2]

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1. Sandia National Laboratories, Livermore, California 94551-0969 (United States)
2. ThermoTrex Corporation, 85 First Avenue, P.O. Box 9046, Waltham, Massachusetts 02254-9046 (United States)

In this work, we explore the use of the chemical vapor composites (CVC) process to increase the rates of silicon carbide (SiC) growth on graphite substrates. Large SiC seed particles are used that deposit by gravity-driven sedimentation. The results show that addition of large ([ital d][sub [ital p]]=28 [mu]m) SiC seed particles to a gas phase containing hydrogen and methyltrichlorosilane increases the deposition rate of SiC by amounts substantially higher than that expected from the addition of the particle volume alone. Insight into the mechanism of this deposition rate enhancement is obtained through analysis of SEM photographs of deposits. Growth rates and deposit structures are consistent with the trends predicted by the previously developed random-sphere model of simultaneous particle-vapor deposition (RASSPVDN), which is used here to interpret the data.

• OSTI ID: 5439127
• Journal Information: Journal of Materials Research; (United States), Vol. 8:7; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
CHEMICAL VAPOR DEPOSITION
SEDIMENTATION
GRAPHITE
MATHEMATICAL MODELS
RANDOMNESS
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
CARBIDES
CARBON
CARBON COMPOUNDS
CHEMICAL COATING
DEPOSITION
ELECTRON MICROSCOPY
ELEMENTAL MINERALS
ELEMENTS
MICROSCOPY
MINERALS
NONMETALS
SILICON COMPOUNDS
SURFACE COATING
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication