Surface and bulk electronic structure of thin-film wurtzite GaN

Dhesi, S S; Stagarescu, C B; Smith, K E; Doppalapudi, D; Singh, R; Moustakas, T D

doi:10.1103/PhysRevB.56.10271

Title: Surface and bulk electronic structure of thin-film wurtzite GaN

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Abstract

The bulk and surface valence-band electronic structure of thin-wurtzite GaN has been studied using angle-resolved photoemission spectroscopy. The bulk band dispersion along the {Gamma}{Delta}A, {Gamma}{Sigma}M, and {Gamma}TK directions of the bulk Brillouin zone was measured. Our results indicate the local-density approximation band-structure calculations using partial-core corrections for the Ga 3d states predict the relative dispersion of many of the observed bands with a high degree of accuracy. Furthermore, a nondispersive feature was identified near the valence-band maximum in a region of k space devoid of bulk states. This feature is identified as emission from a surface state on GaN(0001)-(1{times}1). The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of sp{sub z} character, consistent with a dangling-bond state. {copyright} {ital 1997} {ital The American Physical Society}

Authors:

Dhesi, S S; Stagarescu, C B; Smith, K E ^[1]; Doppalapudi, D; Singh, R; Moustakas, T D ^[2]

Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)
Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States)

Publication Date:: Wed Oct 01 00:00:00 EDT 1997

OSTI Identifier:: 543828

Resource Type:: Journal Article

Journal Name:: Physical Review, B: Condensed Matter

Additional Journal Information:: Journal Volume: 56; Journal Issue: 16; Other Information: PBD: Oct 1997

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GALLIUM NITRIDES; ELECTRONIC STRUCTURE; THIN FILMS; PHOTOELECTRON SPECTROSCOPY; BRILLOUIN ZONES; CHEMICAL BONDS; BAND THEORY; ENERGY GAP

Citation Formats


                    Dhesi, S S, Stagarescu, C B, Smith, K E, Doppalapudi, D, Singh, R, and Moustakas, T D. Surface and bulk electronic structure of thin-film wurtzite GaN.  United States: N. p., 1997. 
        Web.  doi:10.1103/PhysRevB.56.10271.

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                    Dhesi, S S, Stagarescu, C B, Smith, K E, Doppalapudi, D, Singh, R, & Moustakas, T D. Surface and bulk electronic structure of thin-film wurtzite GaN.  United States.  https://doi.org/10.1103/PhysRevB.56.10271

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                    Dhesi, S S, Stagarescu, C B, Smith, K E, Doppalapudi, D, Singh, R, and Moustakas, T D. 1997.  
        "Surface and bulk electronic structure of thin-film wurtzite GaN".  United States.  https://doi.org/10.1103/PhysRevB.56.10271.

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@article{osti_543828,

  title        = {Surface and bulk electronic structure of thin-film wurtzite GaN},

  author       = {Dhesi, S S and Stagarescu, C B and Smith, K E and Doppalapudi, D and Singh, R and Moustakas, T D},

  abstractNote = {The bulk and surface valence-band electronic structure of thin-wurtzite GaN has been studied using angle-resolved photoemission spectroscopy. The bulk band dispersion along the {Gamma}{Delta}A, {Gamma}{Sigma}M, and {Gamma}TK directions of the bulk Brillouin zone was measured. Our results indicate the local-density approximation band-structure calculations using partial-core corrections for the Ga 3d states predict the relative dispersion of many of the observed bands with a high degree of accuracy. Furthermore, a nondispersive feature was identified near the valence-band maximum in a region of k space devoid of bulk states. This feature is identified as emission from a surface state on GaN(0001)-(1{times}1). The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of sp{sub z} character, consistent with a dangling-bond state. {copyright} {ital 1997} {ital The American Physical Society}},

  doi          = {10.1103/PhysRevB.56.10271},

  url          = {https://www.osti.gov/biblio/543828},
  journal      = {Physical Review, B: Condensed Matter},
number       = 16,

  volume       = 56,

  place        = {United States},

  year         = {Wed Oct 01 00:00:00 EDT 1997},

  month        = {Wed Oct 01 00:00:00 EDT 1997}

}

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