Thin film polycrystalline silicon solar cell

Conference · Wed Sep 01 00:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5426384

Lin, A Z; Fan, Z Q; Sheng, H Y; Zhao, X W

Epitaxial solar cells of different type have been studied by taking the refined metallurgical grade silicon as original material, including the unidirectionally recrystallized silicon on the graphite substrate, and then depositing a thin silicon film to form the p-n junction; also including horizontally and unidirectionally solidifying polycrystalline ingot in a graphite crucible and Czochraski-grown ingots by once pulling and twice pullings, these ingots were cut into wafers, then depositing a silicon film to form the p-n junction. Some electrical characteristics of these different types of solar cell have been described. The impurity situations of the cells were analyzed, including the measurements of DLTS.

• Research Organization: General Research Institute of Non-Ferrous Metals, Beijing
• OSTI ID: 5426384
• Report Number(s): CONF-820906-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 16. IEEE photovoltaics specialists conference, San Diego, CA, USA, 28 Sep 1982
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
CRYSTAL GROWTH METHODS
SILICON SOLAR CELLS
ELECTRICAL PROPERTIES
FABRICATION
P-N JUNCTIONS
DEPOSITION
EPITAXY
GRAIN ORIENTATION
GRAPHITE
IMPURITIES
POLYCRYSTALS
SOLIDIFICATION
SUBSTRATES
THIN FILMS
CARBON
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTAL MINERALS
ELEMENTS
EQUIPMENT
FILMS
JUNCTIONS
MICROSTRUCTURE
MINERALS
NONMETALS
ORIENTATION
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion