High spatial resolution quantitative microwave impedance microscopy by a scanning tip microwave near-field microscope

Journal Article · Mon Sep 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120444· OSTI ID:542532

Gao, C; Wei, T; Duewer, F; Lu, Y; Xiang, X ^[1]

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1. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

A recently developed scanning tip microwave near-field microscope has been improved to achieve a spatial resolution of 100 nm ({approximately}{lambda}/10{sup 6}). Furthermore, explicit calculations of the field distribution using a simplified model allow quantitative microscopy of dielectric properties for dielectric materials. A detection sensitivity of {delta}{var_epsilon}/{var_epsilon}{approximately}6{times}10{sup {minus}4} has been achieved. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 542532
• Journal Information: Applied Physics Letters, Vol. 71, Issue 13; Other Information: PBD: Sep 1997
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
MICROSCOPES
MICROWAVE RADIATION
RESOLUTION
DIELECTRIC MATERIALS
DESIGN
ELECTRIC IMPEDANCE