Stress mapping of chemical-vapor-deposited diamond film surface by micro-Raman spectroscopy
- General Physics Institute, RAS, 117942 Moscow (Russia)
A confocal Raman spectroscopy was used to measure intrinsic stress distribution on the growth surface within individual grains of chemical-vapor-deposited diamond film. Polarization analysis of the Raman line shape revealed that even in high quality (2.8cm{sup {minus}1} linewidth), free-standing film of 0.6 mm thickness, small regions exist where high local stresses (both compressive and tensile) develop. The stressed regions tend to appear near crystal edges and grain boundaries. A strong gradient in defect or impurity concentrations is supposed to cause the stress fluctuations observed. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 542524
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 13; Other Information: PBD: Sep 1997
- Country of Publication:
- United States
- Language:
- English
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