Stress mapping of chemical-vapor-deposited diamond film surface by micro-Raman spectroscopy

Journal Article · Mon Sep 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119399· OSTI ID:542524

Vlasov, I I; Ralchenko, V G; Obraztsova, E D; Smolin, A A; Konov, V I ^[1]

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1. General Physics Institute, RAS, 117942 Moscow (Russia)

A confocal Raman spectroscopy was used to measure intrinsic stress distribution on the growth surface within individual grains of chemical-vapor-deposited diamond film. Polarization analysis of the Raman line shape revealed that even in high quality (2.8cm{sup {minus}1} linewidth), free-standing film of 0.6 mm thickness, small regions exist where high local stresses (both compressive and tensile) develop. The stressed regions tend to appear near crystal edges and grain boundaries. A strong gradient in defect or impurity concentrations is supposed to cause the stress fluctuations observed. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 542524
• Journal Information: Applied Physics Letters, Vol. 71, Issue 13; Other Information: PBD: Sep 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIAMONDS
STRESSES
THIN FILMS
RAMAN SPECTRA
CHEMICAL VAPOR DEPOSITION
GRAIN BOUNDARIES
IMPURITIES