Refractory oxide hosts for a high power, broadly tunable laser with high quantum efficiency and method of making same

Patent · Tue Aug 05 00:00:00 EDT 1986

OSTI ID:5422972

Chen, Y; Gonzalez, R

A high power laser host material is described which is formed of a refractory oxide crystal characterized by high quantum efficiency and high thermal stability with a substantially complete depletion of hydrogen and containing sufficient oxygen anion vacancies to produce only F/sup +/ luminescence when optically excited.

• Assignee: Dept. of Energy, Washington, DC
• Patent Number(s): US 4604225
• OSTI ID: 5422972
• Resource Relation: Patent File Date: Filed date 3 Jul 1985
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LASERS
FABRICATION
QUANTUM EFFICIENCY
REFRACTORIES
OXIDES
OPTICAL PUMPING
HYDROGEN
LASER MATERIALS
LUMINESCENCE
MONOCRYSTALS
OXYGEN
STABILITY
TEMPERATURE EFFECTS
TUNING
CHALCOGENIDES
CRYSTALS
EFFICIENCY
ELEMENTS
MATERIALS
NONMETALS
OXYGEN COMPOUNDS
PUMPING
420300* - Engineering- Lasers- (-1989)