Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes

Hava, S; Sequeira, H B; Hunsperger, R G

doi:10.1063/1.336020

Title: Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes

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Abstract

Analyses of heat spreading, temperature distribution, and resultant cooling effects in a monolithically Peltier-cooled laser (MPCL) structure are presented. The analyses were obtained by using Laplace's equation and were made under steady-state conditions, assuming constant thermal conductivity. In this MPCL structure a metal surface layer surrounds a heat-generating p-n laser junction. It is shown that by depositing relatively thick metallic cooling plates a 15% temperature reduction and 25% thermal spreading can be achieved. This heat spreading due to the passive cooling is added to the cooling obtained when the Peltier cooler is operated. Experimental measurements of the effect of Peltier cooling reveal a 6.8 /sup 0/C reduction in junction temperature corresponding to a wavelength shift of as much as 20 A.

Authors:: Hava, S; Sequeira, H B; Hunsperger, R G

Publication Date:: Sun Sep 01 00:00:00 EDT 1985

Research Org.:: Department of Electrical Engineering, Ben Gurion University of the Negev, Beer-Sheva, Israel 84120

OSTI Identifier:: 5421582

Resource Type:: Journal Article

Journal Name:: J. Appl. Phys.; (United States)

Additional Journal Information:: Journal Volume: 58:5

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; SEMICONDUCTOR LASERS; COOLING; HEAT FLOW; THERMODYNAMIC PROPERTIES; THERMOELECTRIC PROPERTIES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; TEMPERATURE DISTRIBUTION; TEMPERATURE EFFECTS; THERMAL CONDUCTIVITY; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; LASERS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; 420300* - Engineering- Lasers- (-1989)

Citation Formats


                    Hava, S, Sequeira, H B, and Hunsperger, R G. Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes.  United States: N. p., 1985. 
        Web.  doi:10.1063/1.336020.

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                    Hava, S, Sequeira, H B, & Hunsperger, R G. Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes.  United States.  https://doi.org/10.1063/1.336020

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                    Hava, S, Sequeira, H B, and Hunsperger, R G. 1985.  
        "Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes".  United States.  https://doi.org/10.1063/1.336020.

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@article{osti_5421582,

  title        = {Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes},

  author       = {Hava, S and Sequeira, H B and Hunsperger, R G},

  abstractNote = {Analyses of heat spreading, temperature distribution, and resultant cooling effects in a monolithically Peltier-cooled laser (MPCL) structure are presented. The analyses were obtained by using Laplace's equation and were made under steady-state conditions, assuming constant thermal conductivity. In this MPCL structure a metal surface layer surrounds a heat-generating p-n laser junction. It is shown that by depositing relatively thick metallic cooling plates a 15% temperature reduction and 25% thermal spreading can be achieved. This heat spreading due to the passive cooling is added to the cooling obtained when the Peltier cooler is operated. Experimental measurements of the effect of Peltier cooling reveal a 6.8 /sup 0/C reduction in junction temperature corresponding to a wavelength shift of as much as 20 A.},

  doi          = {10.1063/1.336020},

  url          = {https://www.osti.gov/biblio/5421582},
  journal      = {J. Appl. Phys.; (United States)},
number       = ,

  volume       = 58:5,

  place        = {United States},

  year         = {Sun Sep 01 00:00:00 EDT 1985},

  month        = {Sun Sep 01 00:00:00 EDT 1985}

}

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