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Title: Narrow band gap amorphous silicon semiconductors

Abstract

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Inventors:
;
Publication Date:
Research Org.:
Solar Energy Research Inst., Golden, CO (USA)
OSTI Identifier:
5421013
Application Number:
ON: DE85017753
Assignee:
Dept. of Energy EDB-85-146776
DOE Contract Number:
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; N-TYPE CONDUCTORS; CRYSTAL DOPING; SILICON; AMORPHOUS STATE; DOPED MATERIALS; FABRICATION; GERMANIUM; LEAD; TIN; ELEMENTS; MATERIALS; METALS; SEMICONDUCTOR MATERIALS; SEMIMETALS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Madan, A., and Mahan, A.H.. Narrow band gap amorphous silicon semiconductors. United States: N. p., 1985. Web.
Madan, A., & Mahan, A.H.. Narrow band gap amorphous silicon semiconductors. United States.
Madan, A., and Mahan, A.H.. 1985. "Narrow band gap amorphous silicon semiconductors". United States. doi:.
@article{osti_5421013,
title = {Narrow band gap amorphous silicon semiconductors},
author = {Madan, A. and Mahan, A.H.},
abstractNote = {Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1985,
month = 1
}